Positive temperature coefficient resistor behavior in praseodymium-doped ZnO (000 1) ∫ (000 1) boundaries

Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

  Lee, Jong Sook ^a   Kim, Yong ^a   Shin, Eui Chol ^a   Maier, Joachim ^b  

^a Chonnam National University   (South Korea)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; DEEP TRAPS; DOPED ZNO; ELECTRICAL CHARACTERIZATION; SCHOTTKY BARRIER HEIGHTS; TEMPERATURE RANGE;

BICRYSTALS; POSITIVE TEMPERATURE COEFFICIENT; PRASEODYMIUM; RESISTORS; SCHOTTKY BARRIER DIODES;

ZINC OXIDE;

EID: 77952963086     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3432444     Document Type: Article

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