Network model for the evolution of the pore structure of silicon-carbide membranes during their fabrication

Journal of Membrane Science

Volumn 356, Issue 1-2, 2010, Pages 138-146

  Mourhatch, Rayan ^a   Tsotsis, Theodore T ^a   Sahimi, Muhammad ^a  

^a University of Southern California ^*  (United States)

Author keywords

Chemical vapor deposition; Nanoporous membranes; Pore shrinkage; Pore network model; Silicon carbide

Indexed keywords

CARRIER GAS; CVD PROCESS; EFFECTIVE SIZE; EXPERIMENTAL DATA; HINDERED DIFFUSION; INTERCONNECTED PORES; INTERNAL SURFACES; KNUDSEN; MAXWELL-STEFAN EQUATIONS; NANO-POROUS SILICON; NANOPOROUS MEMBRANE; NETWORK MODELS; OPTIMAL CONDITIONS; PERMSELECTIVITIES; PORE SHRINKAGE; PORE SPACE; PORE-NETWORK MODEL; PORE-NETWORK MODELS; SIMULATION RESULT; THREE-DIMENSIONAL NETWORKS; TRANSPORT MECHANISM; TRANSPORT PROCESS;

ARGON; CHEMICAL VAPOR DEPOSITION; HELIUM; MAXWELL EQUATIONS; PORE SIZE; PORE STRUCTURE; SHRINKAGE; SILICON CARBIDE;

MEMBRANES;

ARGON; HELIUM; SILICON CARBIDE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMICAL PROCEDURES; CHEMICAL VAPOR DEPOSITION; CHEMICAL VAPOR INFILTRATION; COMPUTER SIMULATION; DIFFUSION; FLOW KINETICS; GAS PERMEABILITY; MEMBRANE STRUCTURE; MEMBRANE THICKNESS; MODEL; NANOPORE; POROSITY; PRIORITY JOURNAL;

EID: 77952745278     PISSN: 03767388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.memsci.2010.03.045     Document Type: Article

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