메뉴 건너뛰기




Volumn 39, Issue 9, 2000, Pages 3264-3271

Porous silicon carbide sintered substrates for high-temperature membranes

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; PARTICLE SIZE ANALYSIS; PORE SIZE; POROSITY; SINTERED CARBIDES; SUBSTRATES; SURFACE STRUCTURE; TRANSPORT PROPERTIES;

EID: 0034282441     PISSN: 08885885     EISSN: None     Source Type: Journal    
DOI: 10.1021/ie0000156     Document Type: Article
Times cited : (108)

References (2)
  • 1
    • 0032558175 scopus 로고    scopus 로고
    • Separation of Hydrogen from Steam Using a SiC-Based Membrane Formed by Chemical Vapor Deposition of Trisopropylsilane
    • Sea, B. K.; Ando, K.; Kusakabe, K.; Morooka, S. Separation of Hydrogen From Steam Using a SiC-Based Membrane Formed by Chemical Vapor Deposition of Trisopropylsilane. J. Membr. Sci. 1998, 146 [1], 73.
    • (1998) J. Membr. Sci. , vol.146 , Issue.1 , pp. 73
    • Sea, B.K.1    Ando, K.2    Kusakabe, K.3    Morooka, S.4
  • 2
    • 0031649958 scopus 로고    scopus 로고
    • Silicon Carbide Membranes Modified by Chemical Vapor Deposition Using Species of Low-Sticking Coefficients in a Silane/Acetylene Reaction System
    • Lee, L.; Tsai, D. S. Silicon Carbide Membranes Modified by Chemical Vapor Deposition Using Species of Low-Sticking Coefficients in a Silane/Acetylene Reaction System. J. Am. Ceram. Soc. 1998, 81 [1], 159.
    • (1998) J. Am. Ceram. Soc. , vol.81 , Issue.1 , pp. 159
    • Lee, L.1    Tsai, D.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.