A new method to extract the charge centroid in the program operation of metal-oxide-nitride-oxide-semiconductor memories

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Fujii, Shosuke ^a   Yasuda, Naoki ^a   Fujiki, Jun ^a   Muraoka, Kouichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CENTROID; EXISTING METHOD; MEMORY CELL; METAL-OXIDE; PROGRAM OPERATION; SEMICONDUCTOR MEMORY; TEST SEQUENCE; TRAP SITES;

SEMICONDUCTOR DEVICES; SEMICONDUCTOR STORAGE;

SILICON NITRIDE;

EID: 77952732678     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DD06     Document Type: Article

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