Electrically pumped wavelength-tunable ultraviolet random lasing from MgxZn1-xO films on Si

Optics Express

Volumn 18, Issue 10, 2010, Pages 10668-10673

  Ye, Tian ^a   Ma, Xiangyang ^a   Chen, Peiliang ^a   Zhang, Yuanyuan ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

BAND GAP ENERGY; CENTRAL WAVELENGTH; ELECTRICALLY PUMPED; METAL INSULATOR SEMICONDUCTOR STRUCTURES; MIS STRUCTURE; OPTICAL SCATTERING; POSITIVE VOLTAGE; RANDOM LASING; SEMICONDUCTOR COMPONENTS; SI SUBSTRATES; WAVELENGTH TUNABLE;

ZINC;

ARTICLE; ARTIFICIAL MEMBRANE; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; SOLID STATE LASER; ULTRAVIOLET RADIATION;

ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LASERS, SOLID-STATE; MEMBRANES, ARTIFICIAL; ULTRAVIOLET RAYS;

EID: 77952693505     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.010668     Document Type: Article

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