Floating gate memory based on ferritin nanodots with high-k gate dielectrics

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Ohara, Kosuke ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a   Yamashita, Ichiro ^a   Yaegashi, Toshitake ^b   Moniwa, Masahiro ^b   Yoshimaru, Masaki ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CHARACTERISTIC; CAPACITANCE-VOLTAGE CHARACTERISTICS; CHARGING MECHANISM; FLOATING GATE MEMORIES; HIGH-DENSITY; HIGH-K GATE DIELECTRICS; MEMORY DEVICE; MEMORY WINDOW; METAL-OXIDE- SEMICONDUCTORCAPACITORS; NANODOTS; RETENTION CHARACTERISTICS; STORAGE CHARGES; TUNNEL OXIDE];

CAPACITANCE; CAPACITORS; ELECTRIC CHARGE; GATES (TRANSISTOR); HYSTERESIS; MONOLAYERS; MOS CAPACITORS; NANOSTRUCTURED MATERIALS;

GATE DIELECTRICS;

EID: 77952523667     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C153     Document Type: Article

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