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Volumn 48, Issue 4 PART 2, 2009, Pages

One-and two-dimensional spectral diffusions in InP/InAs/InP Core-multishell nanowires

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT ENERGY; FAST RATE; INAS; INHOMOGENEOUS BROADENING; MULTIPLE-PEAK; PHOTOLUMINESCENCE BANDS; PHOTOLUMINESCENCE PEAK; PHOTOLUMINESCENCE SPECTRUM; RED SHIFT; SINGLE NANOWIRES; SPECTRAL DIFFUSION; TIME-DEPENDENT; TIME-RESOLVED PHOTOLUMINESCENCE; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY; TWO STAGE; WURTZITES;

EID: 77952504757     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C203     Document Type: Article
Times cited : (6)

References (10)
  • 10
    • 77952474981 scopus 로고    scopus 로고
    • note
    • In the type-I exciton, both the electron and the hole are confined in the well layer, while in the type-II exciton, the electron and the hole are confined in different layers. Spectral diffusion for type-II excitons are different from type-I excitons, in the point that electrons and holes are localized in different layers. The deformation potentials of the valence (conduction) band of both the InAs and the InP are given as 1.00 eV (-5:08 eV) and 1.27 eV (-5:04 eV) respectivelly.6) The difference in the deformation potentials of the valence (conduction) band between the InAs and InP is very small. Therefore, the type-I excitondeformation potential interaction is almost the same as the type-II exciton-acoustic phonon deformation potential interaction.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.