Study of super-resolution read-only-memory disk with a semiconducting or chalcogenide mask layer

Japanese Journal of Applied Physics

Volumn 48, Issue 3 PART 2, 2009, Pages

  Pilard, Gael ^a   Féry, Christophe ^a   Pacearescu, Larisa ^a   Hoelzemann, Herbert ^a   Knappmann, Stephan ^a  

^a Deutsche Thomson OHG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGINSBTE; BIT LENGTHS; CARRIER TO NOISE RATIO; MASK LAYER; RANDOM PATTERN; RUN LENGTH; SUPER RESOLUTION;

BIT ERROR RATE; DISKS (STRUCTURAL COMPONENTS); INDIUM ANTIMONIDES; OPTICAL RESOLVING POWER;

PHASE CHANGE MEMORY;

EID: 77952495266     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.03A064     Document Type: Article

References (10)

1. G. Bouwhuis and J. H. M. Spruit: Appl. Opt. 29 (1990) 3766.
2. K. Yasuda, M. Ono, K. Aratani, A. Fukumoto, and M. Kaneko: Jpn. J. Appl. Phys. 32 (1993) 5210.
3. T. Shima, T. Nakano, K. Kurihara, J. Kim, and J. Tominaga: Jpn. J. Appl. Phys. 47 (2008) 5842.
4. M. Kuwahara, T. Shima, P. Fons, T. Fukaya, and J. Tominaga: J. Appl. Phys. 100 (2006) 43106.
5. B. Hyot, X. Biquard, and F. Laulagnet: ISOM Tech. Dig., 2007, p. 12.
6. J. Pichon, M. F. Armand, F. Laulagnet, and B. Hyot: ISOM Tech. Dig., 2007, p. 14.
7. D. Eto, K. Aoki, and S. Ohkubo: Jpn. J. Appl. Phys. 47 (2008) 6039.
8. J. Tominaga, T. Nakano, and N. Atoda: Appl. Phys. Lett. 73 (1998) 2078.
9. Y. Kasami, K. Yasuda, M. Ono, A. Fukumoto, and M. Kaneko: Jpn. J. Appl. Phys. 35 (1996) 423.
10. S. Ohkubo, K. Aoki, E. Kariyada, and D. Eto: ISOM/ODS Tech. Dig., 2008, ThC07, TD05-59.