Current collapseless high-voltage GaN-HEMT and its 50-W boost converter operation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 869-872

  Saito, Wataru ^a   Kuraguchi, Masahiko ^a   Takada, Yoshiharu ^a   Tsuda, Kunio ^a   Saito, Yasunobu ^a   Omura, Ichiro ^a   Yamaguchi, Masakazu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONVERTERS; ELECTRIC CURRENT MEASUREMENT; ELECTRON DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL DESIGN; SEMICONDUCTING GALLIUM;

APPLIED VOLTAGES; BOOST CONVERTERS; CURRENT COLLAPSE; FABRICATED DEVICES; FIELD PLATE; GAN-HEMT; HIGH POWER EFFICIENCY; HIGH VOLTAGES; ON-RESISTANCE MODULATION; OUTPUT POWERS; POWER ELECTRONIC APPLICATIONS; W-BOOST;

MODULATION;

EID: 50249129240     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419087     Document Type: Conference Paper

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