Influence of annealing time on microstructure of one-dimensional Ga2O3 nanorods

Journal of Alloys and Compounds

Volumn 498, Issue 1, 2010, Pages 77-80

  Shi, Feng ^a   Zhang, Shiying ^a   Xue, Chengshan ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Ga2O3; Annealing; Magnetron sputtering; Nanorods

Indexed keywords

ANNEALING TIME; EMISSION INTENSITY; GAN NANORODS; GROWTH DIRECTIONS; HIGH QUALITY; LUMINESCENCE MECHANISMS; PHOTOLUMINESCENCE SPECTRUM; SEM; SI (1 1 1);

ANNEALING; CRYSTALLINE MATERIALS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT; LIGHT TRANSMISSION; MICROSTRUCTURE; NANORODS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 77952106222     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.03.106     Document Type: Article

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