Fabrication and electrical characterization of the surfacetype Au/NiPc/Ag diode

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 3, Issue 8, 2009, Pages 831-834

  Shah, M ^a   Sayyad, M H ^a   Karimov, Kh S ^a,b   Mahroof Tahir, M ^c  

^a GIK INSTITUTE OF ENGINEERING SCIENCES AND TECHNOLOGY   (Pakistan)

^b Physical Technical Institute Dushnabe   (Tajikistan)

^c ST CLOUD STATE UNIVERSITY   (United States)

Author keywords

Mobility; NiPc thin films; Organic semiconductor; Schottky diode

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; FABRICATION; FILM THICKNESS; GOLD DEPOSITS; ORGANIC SEMICONDUCTOR MATERIALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SUBSTRATES; THIN FILM CIRCUITS;

BARRIER HEIGHTS; CONDUCTION MECHANISM; ELECTRICAL CHARACTERIZATION; GLASS SUBSTRATES; NICKEL PHTHALOCYANINES; OHMIC CONDUCTION; SCHOTTKY DIODES; SPACE CHARGE LIMITED CURRENTS;

THIN FILMS;

EID: 77951995491     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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