Fabrication process of carbon nanotube field effect transistors using atomic layer deposition passivation for biosensors

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 6, 2010, Pages 3805-3809

  Nakashima, Yasuhiro ^a   Ohno, Yutaka ^a   Kishimoto, Shigeru ^a   Okochi, Mina ^a   Honda, Hiroyuki ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

ALD; Atomic layer deposition; Biosensor; Carbon nanotube; CNT FET; HfO 2

Indexed keywords

ALD; BIOSENSING; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; DAMAGE SUPPRESSION; FABRICATION PROCESS; INSULATOR FILMS;

ATOMIC LAYER DEPOSITION; ATOMS; BIOSENSORS; CARBON NANOTUBES; DEPOSITION; DRAIN CURRENT; FABRICATION; HAFNIUM COMPOUNDS; MESFET DEVICES; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

FIELD EFFECT TRANSISTORS;

CARBON NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; GENETIC PROCEDURES; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

BIOSENSING TECHNIQUES; CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES, CARBON; PARTICLE SIZE; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC;

EID: 77951892848     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.1983     Document Type: Article

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