Self-rectifying resistive memory based on Au nanocrystal-embedded zirconium oxide for crossbar array application

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Volumn , Issue , 2010, Pages 228-229

  Zuo, Qingyun ^a   Long, Shibing ^a   Liu, Qi ^a   Zhang, Sen ^a   Wang, Qin ^a   Li, Yingtao ^a   Wang, Yan ^a   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AU NANOCRYSTALS; CROSS-BAR STRUCTURES; CROSSBAR ARRAYS; CURRENT CONDUCTION MECHANISMS; E BEAM EVAPORATION; LOW-RESISTANCE STATE; RECTIFICATION RATIO; RESISTIVE SWITCHING BEHAVIORS; SWITCHING ELEMENTS; ZIRCONIUM OXIDE;

NANOCRYSTALS; NANOELECTRONICS; SWITCHING SYSTEMS; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

DISTILLATION;

EID: 77951665053     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INEC.2010.5424649     Document Type: Conference Paper

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