Low power CMOS preamplifier for neural recording applications

Journal of Semiconductors

Volumn 31, Issue 4, 2010, Pages

  Zhang, Xu ^a   Pei, Weihua ^a   Huang, Beiju ^a   Chen, Hongda ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Low noise; Low power; Neural signal amplifier; Subthreshold circuit design

Indexed keywords

ACTION POTENTIALS; BAND PASS; BANDGAP REFERENCE; BIASING VOLTAGES; CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR); DC GAIN; EXTRACELLULAR; FEEDBACK TOPOLOGY; FULLY-DIFFERENTIAL; LOCAL FIELD POTENTIALS; LOW NOISE; LOW POWER; LOW POWER CMOS; NEURAL RECORDINGS; NEURAL SIGNAL AMPLIFIER; NEURAL SPIKE; POWER DISSIPATION; PROTOTYPE CHIP; SUBTHRESHOLD CIRCUITS;

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; METALLIC COMPOUNDS; MOS DEVICES; THRESHOLD ELEMENTS;

AMPLIFIERS (ELECTRONIC);

EID: 77951619666     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/31/4/045002     Document Type: Article

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