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Volumn , Issue , 2009, Pages 000181-000186
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Physical mechanisms of breakdown in multicrystalline silicon solar cells
a
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Author keywords
[No Author keywords available]
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Indexed keywords
1550 NM;
AVALANCHE BREAKDOWN;
AVALANCHE MULTIPLICATION;
BREAKDOWN MECHANISM;
BREAKDOWN SITES;
DEFECT LEVELS;
DEFECT LUMINESCENCE;
EDGE BREAKDOWN;
ETCH PITS;
HIGH SLOPES;
LATTER MECHANISM;
MULTI-CRYSTALLINE SILICON SOLAR CELLS;
PHYSICAL MECHANISM;
PREBREAKDOWN;
REVERSE BIAS;
REVERSE CURRENTS;
TEMPERATURE COEFFICIENT;
TRAP ASSISTED TUNNELING;
DEFECTS;
EDGE DISLOCATIONS;
ELECTROLUMINESCENCE;
LIGHT;
POLYSILICON;
SILICON SOLAR CELLS;
THERMAL CONDUCTIVITY;
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EID: 77951595272
PISSN: 01608371
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/PVSC.2009.5411700 Document Type: Conference Paper |
Times cited : (12)
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References (6)
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