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Volumn 763, Issue , 2003, Pages 365-370

Optimized growth conditions for Cu(In,Ga)Se2 layers grown by co-evaporation at high deposition rates

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DEPOSITION; DIFFUSION; ELECTRIC POTENTIAL; EVAPORATION; SHORT CIRCUIT CURRENTS; STOICHIOMETRY;

EID: 0344065513     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-763-b8.14     Document Type: Conference Paper
Times cited : (3)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.