Analysis of the CdTe hole concentration and the hole mobility

ISSE 2007 - 30th International Spring Seminar on Electronics Technology 2007; Conference Proceedings: Emerging Technologies for Electronics Packaging

Volumn , Issue , 2007, Pages 148-151

  Andreev, Alexey ^a   Zajacek, Jiri ^a   Grmela, Lubomir ^a   Sikula, Josef ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; CADMIUM COMPOUNDS; COMPUTER NETWORKS; ELECTRIC CURRENTS; ELECTRONIC EQUIPMENT MANUFACTURE; ELECTRONICS PACKAGING; FERMI LEVEL; FERMIONS; FIBER OPTIC SENSORS; HEALTH; HOLE MOBILITY; METAL ANALYSIS; MICROFLUIDICS; PACKAGING; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR QUANTUM DOTS; SPRINGS (COMPONENTS); TECHNOLOGY; TEMPERATURE;

(MIN ,MAX ,+) FUNCTIONS; APPLIED VOLTAGES; CONCENTRATION (COMPOSITION); CONFERENCE PROCEEDINGS; EFFECT OF TEMPERATURE; ELECTRONICS TECHNOLOGY; EMERGING TECHNOLOGIES; INTERNATIONAL (CO); LONG TIME; SEMICONDUCTOR PROPERTIES; TEMPERATURE CHANGING;

HOLE CONCENTRATION;

EID: 44849134635     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSE.2007.4432837     Document Type: Conference Paper

References (3)

1. Zanio, K. Semiconductors and semimetals. Volume 13. Cadmium Telluride. Academic Press, 1978
2. Sze, S., M. Physics of Semiconductor Devices, J.Wiley & Sons New York, 1981
3. Turkevych, I., Grill, R., Moravec, P. Hight-temperature electron and hole mobility in the CdTe, Semiconductor Science and Technologies, 17(2002), p.1066