Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process

Semiconductor Science and Technology

Volumn 25, Issue 5, 2010, Pages

  Wang, H ^a   Zhang, Y ^a   Kou, X L ^a,b   Cai, Y A ^a   Liu, W ^a   Yu, T ^a   Pang, J B ^a   Li, C J ^a   Sun, Y ^a  

^a Key Laboratory of Photo electronics Thin Film Devices and Technique of Tianjin   (China)

^b Engineering IV   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY PHASE; CIGS FILMS; CIGS SOLAR CELLS; CO-EVAPORATIONS; CU(IN , GA)SE; ELECTRICAL PROPERTY; GLASS SUBSTRATES; GRAIN SIZE; GRAIN-BOUNDARY RECOMBINATION; HALL EFFECT MEASUREMENT; HIGH RESISTIVITY; HIGHER T; ONE-STAGE PROCESS; SEM; STRUCTURAL AND ELECTRICAL PROPERTIES; SUBSTRATE TEMPERATURE;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; EVAPORATION; GALLIUM; GALLIUM ALLOYS; GLASS; HALL EFFECT; MAGNETIC FIELD EFFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SODIUM; X RAY DIFFRACTION;

SUBSTRATES;

EID: 77951216699     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/5/055007     Document Type: Article

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