Device physics of heterojunction with intrinsic thin layer (HIT) solar cells

Materials Research Society Symposium Proceedings

Volumn 1153, Issue , 2009, Pages 201-206

  Kanevce, Ana ^a,b   Metzger, Wyatt K ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Veterinary Dentistry and Oral Surgery   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; HETEROJUNCTIONS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICON SOLAR CELLS; TIN OXIDES;

CARRIER COLLECTION; CURRENT DENSITY-VOLTAGE CURVES; DEVICE PERFORMANCE; DEVICE SIMULATIONS; HETEROJUNCTION WITH INTRINSIC THIN LAYERS; INTERFACE PROPERTY; INTERFACE RECOMBINATION; N-TYPE SEMICONDUCTORS;

AMORPHOUS SILICON;

EID: 77951139820     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1153-a10-04     Document Type: Conference Paper

References (7)

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