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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 5, 2008, Pages 1206-1209

41lanthanum-based dielectric films analyzed by spectroscopic ellipsometry, X-ray reflectometry and X-ray photoelectron spectroscopy

(6) Edon, V a Gaillet, M b Hugon, M C a Eypert, C b Durand, O c Cardinaud, C d

a UNIVERSITÉ PARIS SUD (France)

b HORIBA Jobin Yvon Inc (United States)

c THALES RESEARCH AND TECHNOLOGY (France)

d UNIVERSITÉ DE NANTES (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EFFECTS; INTERFACIAL PROPERTY; INTERFACIAL-LAYER THICKNESS; LORENTZ DISPERSION; THICK AND THIN FILMS; THREE-LAYER; ULTRA-VIOLET; X-RAY REFLECTOMETRY; XPS MEASUREMENTS;

DIELECTRIC FILMS; EPITAXIAL GROWTH; LANTHANUM ALLOYS; OXIDE FILMS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; REFLECTION; REFLECTOMETERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPECTROSCOPIC ELLIPSOMETRY; SPONTANEOUS EMISSION; THIN FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77951119536 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200777839 Document Type: Conference Paper

Times cited : (2)

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