VLS growth of Si nanowires with in-situ doping for MOS transistors

2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Volumn , Issue , 2009, Pages 326-329

  Robbins, Virginia ^a   Taylor, David ^a   Cao, Wanqing ^a   Fischer Colbrie, Alice ^a   Pong, Chungdee ^a   Ahmed, Shibly ^a   Stumbo, David ^a  

^a Nanosys Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMETER VARIATION; GAS COMPOSITIONS; IN-SITU; IN-SITU DOPING; LARGE AREA DISPLAY; MOS TRANSISTORS; NANOWIRE TAPERS; SI NANOWIRE; VAPOR-LIQUID-SOLID GROWTH; VLS GROWTH; WIRE DIAMETER; WIRE GROWTH;

DOPING (ADDITIVES); ELECTRONIC PROPERTIES; NANOWIRES; SEMICONDUCTING SILICON; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; WIRE;

NANOTECHNOLOGY;

EID: 77950981158     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. X Duan, "Assembled Semiconductor Nanowire Thin Films for High-Performance Flexible Macroelectronics," MRS Bulletin, vol.32, pp. 134-141, 2007.
2. J. Westwater, D.P. Gosain and S. Usui, "Control of the Size and Position of Silicon Nanoswires Grown via the Vapour-Liquid-Solid Technique," Jpn. J. Appl Phys., vol.36, pp. 6204-6209, Part1, no.10, 1997.
3. K.K. Lew, et. al., "Structural and electrical properties of trimethylboron-doped silicon nanowires," Applied Physics Letters, vol.85, pp. 3101-3102, 2004.
4. A. Fischer-Colbrie, unpublished.
5. E. Freer, O. Grachev, D. Stumbo, "Dielectrophoretic Directed Assembly of Nanowires Over Large Areas", Nanomanufacturing Summit 2009, Online Preceedings