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Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 3, 2010, Pages 595-598

Effect of local doping on the electronic properties of epitaxial graphene on SiC

(3) Červenka, Jiří a,b Van Der Ruit, Kevin b Flipse, Kees b

a INSTITUTE OF PHYSICS (Czech Republic)

b EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON RICH; ELECTRON PROPERTIES; ELECTRON STATE; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; HIGH-ELECTRON-DENSITY; HIGH-SPEED ELECTRONIC DEVICES; INTERFACE LAYER; LOCALIZED STATE; POSSIBLE FUTURES; PROMISING MATERIALS; SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY;

ELECTRONIC PROPERTIES; ELECTRONS; GRAPHENE; GRAPHITE; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; WIND TUNNELS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77950965182 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200982767 Document Type: Article

Times cited : (4)

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