Characterization of laser ablated AgInSe2 films

Materials Science- Poland

Volumn 28, Issue 1, 2010, Pages 199-205

  Pathak, D ^a   Bedi, R K ^a   Kaur, D ^b  

^a GURU NANAK DEV UNIVERSITY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

Author keywords

Direct band gap materials; FESEM; Heterojunction; Pulse laser ablation; Silicon wafers

Indexed keywords

CHALCOPYRITE THIN FILMS; DIRECT BAND GAP; DIRECT BAND GAP MATERIALS; GROWTH PROCESS; OPTICAL STUDY; ORDERED STRUCTURES; PLD TECHNIQUE; PULSE LASER ABLATION; PULSED-LASER DEPOSITION TECHNIQUE; SILICON MATERIALS; SUBSTRATE TEMPERATURE; X-RAY DIFFRACTION STUDIES;

COPPER COMPOUNDS; DEPOSITION; ENERGY GAP; GROWTH (MATERIALS); HETEROJUNCTIONS; LASER ABLATION; LASER APPLICATIONS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STOICHIOMETRY; THERMAL EVAPORATION; THIN FILMS; X RAY DIFFRACTION;

OPTICAL FILMS;

EID: 77950941464     PISSN: 01371339     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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