Dual-Gate field-effect transistor hydrogen gas sensor with thermal compensation

Japanese Journal of Applied Physics

Volumn 49, Issue 2 Part 1, 2010, Pages

  Tsukada, Keiji ^a   Kariya, Masatoshi ^a   Yamaguchi, Tomiharu ^a   Kiwa, Toshihiko ^a   Yamada, Hironobu ^a   Maehara, Tsuneyoshi ^b   Yamamoto, Tadayoshi ^b   Kunitsugu, Shinsuke ^c  

^a OKAYAMA UNIVERSITY   (Japan)

^b Kinoko cho   (Japan)

^c INDUSTRIAL TECHNOLOGY CENTER OF OKAYAMA PREFECTURE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL OUTPUT; DUAL-GATE FET; GATE FIELD; GATE METALS; HYDROGEN GAS; HYDROGEN GAS SENSORS; HYDROGEN SENSOR; HYDROGEN VEHICLES; INTEGRATED HYDROGEN; INTEGRATED SYSTEMS; REFERENCE SENSORS; ROOM TEMPERATURE; SEVERE WEATHER; SI CHIPS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMAL COMPENSATION;

CHEMICAL SENSORS; CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS; GAS DETECTORS; HYDROGEN; INTEGRATED OPTICS; PLATINUM;

MESFET DEVICES;

EID: 77950809549     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.024206     Document Type: Article

References (27)

1. C. Lim and S. Oh: Sens. Actuators B 30 (1996) 223.
2. A. S. Ryzhikov, A. N. Shatokhin, F. N. Putilin, M. N. Rumyantseva, A. M. Gaskov, and M. Labeau: Sens. Actuators B 107 (2005) 387.
3. N. Yamazoe, J. Fuchigami, and M. Kishikawa: Surf. Sci. 86 (1979) 335.
4. I. Lundström, S. Shivaraman, C. Svensson, and L. Lundkvist: Appl. Phys. Lett. 26 (1975) 55.
5. A. Spetz, M. Armgarth, and I. Lundström: J. Appl. Phys. 64 (1988) 1274.
6. K. Scarnagl, A. Karthigeyan, M. Burgmair, M. Zimmer, T. Doll, and I. Eisele: Sens. Actuators B 80 (2001) 163.
7. K. Yokosawa, K. Saitoh, S. Nakano, Y. Goto, and K. Tsukada: Sens. Actuators B 130 (2008) 94.
8. C. K. Kim, J. H. Lee, Y. H. Lee, N. I. Cho, and D. J. Kim: Sens. Actuators B 66 (2000) 116.
9. K. Lin, H. Chen, H. Chuang, C. Chen, C. Lu, C. Cheng, and W. Liu: IEEE Sens. J. 4 (2004) 72.
10. M. Ali, V. Cimalla, V. Lebedev, H. Romanus, V. Tilak, D. Merfeld, P. Sandvik, and O. Ambacher: Sens. Actuators B 113 (2006) 797.
11. W. P. Kang and Y. Gürbüz: J. Appl. Phys. 75 (1994) 8175.
12. J. Song and W. Lu: IEEE Sens. J. 8 (2008) 903.
13. A. D'Amico, A. Palma, and E. Verona: Sens. Actuators 3 (1982) 31.
14. W. P. Jakubik, M. W. Urbanczyk, S. Kochowski, and J. Bodzenta: Sens. Actuators B 82 (2002) 265.
15. W. P. Jakubik, M. W. Urbanczyk, and E. Maciak: IEEE Sens. J. 6 (2006) 1178.
16. I. Eisele, T. Doll, and M. Burgmair: Sens. Actuators B 78 (2001) 19.
17. S. Okuyama, Y. Mitobe, K. Okuyama, and K. Matsushita: Jpn. J. Appl. Phys. 39 (2000) 3584.
18. K. Yamanaka, S. Ishikawa, N. Nakaso, N. Takeda, T. Mihara and Y. Tsukahara: Proc. IEEE Ultrasonic Symp., 2003, p. 299.
19. W. Shin, K. Tajima, Y. Choi, N. Izu, I. Matsubara, and N. Murayama: Sens. Actuators B 108 (2005) 455.
20. K. Tsukada, T. Kiwa, T. Yamaguchi, S. Migitaka, Y. Goto, and K. Yokosawa: Sens. Actuators B 114 (2006) 158.
21. T. Yamaguchi, T. Kiwa, K. Tsukada, and K. Yokosawa: Sens. Actuators A 136 (2007) 244.
22. K. Tsukada, T. Yamaguchi, and T. Kiwa: IEEE Sens. J. 7 (2007) 1268.
23. K. Tsukada, T. Yamaguchi, T. Kiwa, and H. Yamada: Proc. 6th IEEE Sensor Conf., 2007, p. 677.
24. T. Yamaguchi, M. Takisawa, T. Kiwa, H. Yamada, and K. Tsukada: Sens. Actuators B 133 (2008) 538.
25. T. Yamaguchi, M. Takisawa, T. Kiwa, H. Yamada, and K. Tsukada: IEEJ Trans. Sens. Micromach. 129 (2009) 110.
26. H. H. Chen, S. H. Tseng, and J. Gong: Solid-State Electron. 42 (1998) 1799.
27. M. Hasanuzzaman, S. K. Islam, L. M. Tolbert, and M. T. Alam: Solid- State Electron. 48 (2004) 1877.