Effects of nanoscaled tin-doped indium oxide On the image sticking property of liquid crystal cells

Japanese Journal of Applied Physics

Volumn 49, Issue 2 Part 1, 2010, Pages

  Liang, Bau Jy ^a   Liu, Don Gey ^a   Shie, Wun Yi ^a   Huang, Sy Ruen ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN CHARACTERISTICS; BREAKDOWN VOLTAGE; CONDUCTIVE PARTICLE; DOPED SAMPLE; ELECTRICAL CHARACTERISTIC; HIGH-VOLTAGES; IMAGE STICKING; LIQUID CRYSTAL CELLS; LOW VOLTAGES; MEASUREMENT RESULTS; NANOSCALED; OPERATIONAL VOLTAGE; RESIDUAL TIME; TIN DOPED INDIUM OXIDE;

ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; INDIUM; INDIUM COMPOUNDS; LIQUID CRYSTALS; TIN; TITANIUM COMPOUNDS;

DOPING (ADDITIVES);

EID: 77950802819     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.025004     Document Type: Article

References (20)

1. J.-C. Tseng and J.-G. Hwu: J. Appl. Phys. 101 (2007) 014103.
2. N. T. Golo, S. van der Wal, F. G. Kuper, and T. Mouthaan: Appl. Phys. Lett. 80 (2002) 3337.
3. B.-R. Jiang, C.-Y. Liu, C.-J. Chen-Chiang, K.-S. Tseng, and L.-H. Chang: U.S. Patent 7375724 (2008).
4. T. Kusanagi: U.S. Patent 6108057 (2000).
5. H. Sonoda, M. Ohe, H. Asuma, and S. Matsuyama: U.S. Patent 6433852 (2002).
6. J. Thisayukta, H. Shiraki, Y. Sakai, T. Masumi, S. Kundu, Y. Shiraishi, N. Toshima, and S. Kobayashi: Jpn. J. Appl. Phys. 43 (2004) 5430.
7. S. Yoshikawa, K. Maeda, Y. Shiraishi, J. Xu, H. Shiraki, N. Toshima, and S. Kobayashi: Jpn. J. Appl. Phys. 41 (2002) L1315.
8. W. Lee, C.-Y. Wang, and Y.-C. Shih: Appl. Phys. Lett. 85 (2004) 513.
9. C.-Y, Huang, H.-C. Pan, and C.-T. Hsieh: Jpn. J. Appl. Phys. 45 (2006) 6392.
10. I.-S. Baik, S.-Y. Jeon, S.-H. Lee, K.-A. Park, S.-H. Jeong, K.-H. An, and Y.-H. Lee: Appl. Phys. Lett. 87 (2005) 263110.
11. S.-J. Jeong, P. Sureshkumar, K.-U. Jeong, A. K. Srivastava, S.-H. Lee, S.-H. Jeong, Y.-H. Lee, R. Lu, and S.-T. Wu: Opt. Express 15 (2007) 11698.
12. H. J. Shah, A. K. Fontecchio, D. Mattia, and Yu. Gogotsi: J. Appl. Phys. 103 (2008) 064314.
13. P.-S. Chen, C.-C. Huang, Y.-W. Liu, and C.-Y. Chao: Appl. Phys. Lett. 90 (2007) 211111.
14. T.-J. Lin, C.-C. Chen, S. Cheng, and Y.-F. Chen: Opt. Express 16 (2008) 671.
15. C.-W. Kuo, S.-C. Jeng, H.-L. Wang, and C.-C. Liao: Appl. Phys. Lett. 91 (2007) 141103.
16. S.-J. Hwang, S.-C. Jeng, C.-Y. Yang, C.-W. Kuo, and C.-C. Liao: J. Phys. D 42 (2009) 025102.
17. E. Ouskova, O. Buchnev, V. Reshetnyak, Yu. Reznikov, and H. Kresse: Liq. Cryst. 30 (2003) 1235.
18. J. A. Kok and M. M. G. Corbey: Appl. Sci. Res., Sect. B 6 (1957) 197.
19. E. Kuffel and M. Abdullah: High Voltage Engineering (Pergamon Press, New York, 1970) pp. 90 and 95.
20. J. H. Tortai, N. Bonifaci, and A. Denat: IEEE Trans. Dielectr. Electr. Insul. 9 (2002) 3.