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Volumn 49, Issue 1 Part 1, 2010, Pages
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Gettering in large-grained thin polycrystalline silicon films on glass substrate
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CANDIDATE MATERIALS;
DISILICIDES;
ENERGY DISPERSIVE X-RAY SPECTROSCOPY;
GETTERING;
GLASS SUBSTRATES;
GRAIN SIZE;
GREEN LASER;
HIGH EFFICIENCY;
HIGH-RELIABILITY;
IMPURITIES IN;
KEY TECHNIQUES;
LOW-TEMPERATURE DEVICES;
METAL IMPURITIES;
NI-DOPED;
POLY-SI;
POLY-SI FILMS;
POLY-SI THIN-FILM TRANSISTORS;
POLYCRYSTALLINE SILICON (POLY-SI);
POLYCRYSTALLINE SILICON FILMS;
RECRYSTALLIZATIONS;
SCANNING TRANSMISSION ELECTRON MICROSCOPY;
SOLID-PHASE CRYSTALLIZATION;
STEM-EDX;
TRIPLE JUNCTION;
ENERGY DISPERSIVE SPECTROSCOPY;
FILMS;
GLASS;
GLASS LASERS;
POLYCRYSTALLINE MATERIALS;
SCANNING ELECTRON MICROSCOPY;
SOLAR CELLS;
SUBSTRATES;
THIN FILM TRANSISTORS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
X RAY SPECTROSCOPY;
POLYSILICON;
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EID: 77950793995
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.49.010203 Document Type: Article |
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Times cited : (1)
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References (7)
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