Assessing scatterometry for measuring advanced spacer structures with embedded SiGe

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6922, Issue , 2008, Pages

  Sendelbach, Matthew ^a   Zangooie, Shahin ^a   Vaid, Alok ^b   Herrera, Pedro ^c   Leng, Jingmin ^c   Kim, In Kyo ^c  

^a IBM   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c KLA TENCOR CORPORATION   (United States)

Author keywords

Dispersion; DUV; Scatterometry; Sensitivity; SiGe; Spacer; TEM; TMU

Indexed keywords

DUV; SCATTEROMETRY; SENSITIVITY; SIGE; SPACER; TMU;

DISPERSION (WAVES); SILICON ALLOYS; TRANSMISSION ELECTRON MICROSCOPY; UNITS OF MEASUREMENT;

PROCESS CONTROL;

EID: 77950674210     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.774823     Document Type: Conference Paper

References (3)

1. S. Narasimha, et. al., "High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography, " International Electron Devices Meeting, session 27.3, San Francisco, CA, 2006.
2. M. Sendelbach and C. Archie, "Scatterometry measurement precision and accuracy below 70 nm, " Metrology, Inspection, and Process Control for Microlithography XVII, Daniel J. Herr, Editor, Proceedings of SPIE, Vol. 5038, pp. 224-238, 2003.
3. M. Sendelbach, A. Munoz, K. Bandy, D. Prager, and M. Funk, "Integrated scatterometry in high volume manufacturing for polysilicon gate etch control, " in Metrology, Inspection, and Process Control for Microlithography XX, edited by Chas N. Archie, Proceedings of SPIE Vol. 6152 (SPIE, Bellingham, WA, 2006), Article 61520F.