Characterization and properties of ZnO 1-x S x alloy films fabricated by radio-frequency magnetron sputtering

Applied Surface Science

Volumn 256, Issue 14, 2010, Pages 4621-4625

  Pan, H L ^a   Yang, T ^a   Yao, B ^a,b   Deng, R ^a   Sui, R Y ^a   Gao, L L ^a   Shen, D Z ^b  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Crystal structure; Optical and electrical properties; Rf magnetron sputtering

Indexed keywords

AMORPHOUS FILMS; CRYSTAL STRUCTURE; ENERGY GAP; II-VI SEMICONDUCTORS; METALLIC FILMS; RADIO WAVES; SEMICONDUCTOR ALLOYS; X RAY DIFFRACTION; ZINC; ZINC OXIDE; ZINC SULFIDE;

INSULATING PROPERTIES; OPTICAL AND ELECTRICAL PROPERTIES; PHOTOLUMINESCENCE MEASUREMENTS; PREFERENTIAL ORIENTATION; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; X-RAY DIFFRACTION MEASUREMENTS; ZINC-BLENDE STRUCTURES;

MAGNETRON SPUTTERING;

EID: 77950595580     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.02.061     Document Type: Article

References (22)

1. Fan X., Zhang M.-L., Shafiq I., Zhang W.-J., Lee C.-S., and Lee S.-T. Adv. Mater. 21 (2009) 1-4
2. Huang M.H., Mao S., Feick H., Yan H., Wu Y., Kind H., Weber E., Russo R., and Yang P. Science 292 (2001) 1897-1900
3. Kong X.Y., and Wang Z.L. Nano Lett. 3 (2003) 1625
4. Tran T.K., Park W., Tong W., Kyi M.M., Wagner B.K., and Summers C.J. J. Appl. Phys. 81 (1997) 2803
5. Ager III J.W., and Walukiewicz W. Semicond. Sci. Technol. 17 (2002) 741
6. Shan W., Walukiewicz W., and Ager III J.W. Phys. Rev. Lett. 82 (1999) 1221
7. W. Walukiewicz, Proceedings of the 195th Meeting of the Electrochemical Society, The Electrochemical Society, Inc., Pennington, NJ, 1999, Vol. 99-11, p. 190.
8. Florian Janetzko J., and Jug K. Phys. Chem. A 108 (2004) 5449-5453
9. Yoo Y.-Z., Jin Z.-W., Chikyow T., Fukumura T., Kawasaki M., and Koinuma H. Appl. Phys. Lett. 81 (2002) 3798
10. Meyer B.K., Polity A., Farangis B., He Y., Hasselkamp D., Kramer Th., and Wang C. Appl. Phys. Lett. 85 (2004) 4929
11. Persson C., Platzer-Bjorkman C., Malmstrom J., Torndahl T., and Edoff M. Phys. Rev. Lett. 97 (2006) 146403
12. Zhang Z.Z., Shen D.Z., Zhang J.Y., Shan C.X., Lu Y.M., Liu Y.C., Li B.H., Zhao D.X., Yao B., and Fan X.W. Thin Solid Films 513 (2006) 114-117
13. Ito Y., Nabetani Y., Kato T., and Matsumoto T. Mater. Sci. Semicond. Process. 6 (2003) 409-412
14. Wei S.-H., and Zunger A. Phys. Rev. B 43 (1991) 1662
15. Wei S.-H., and Zunger A. J. Appl. Phys. 78 (1995) 3846
16. Su-Huai Wei S.-H., and Zunger A. Rev. Lett. 76 (1996) 664
17. Yu K.M., Walukiewicz W., Shan W., Ager III J.W., Wu J., and Haller E.E. Phys. Rev. B 61 (2000) R13337
18. Walukiewicz W., Shan W., Yu K.M., and Ager III J.W. Phys. Rev. Lett. 85 (2000) 15552
19. Wu J., Walukiewicz W., Yu K.M., Ager III J.W., Haller E.E., Miotkowski I., Ramdas A.K., Ching-Hua Su I.K., Sou R.C.C., Perera J.D., and Denlinger. Phys. Rev. B 67 (2003) 035207
20. Geng B.Y., Wang G.Z., Jiang Z., Xie T., Sun S.H., Meng G.W., and Zhang L.D. Appl. Phys. Lett. 82 (2003) 4791
21. Bae S.Y., Seo H.W., and Park J. J. Phys. Chem. B 108 (2004) 5206-5210
22. Shan F.K., Liu G.X., Lee W.J., Lee G.H., Kim I.S., and Shin B.C. Appl. Phys. Lett. 86 (2005) 221910