Thermal stability of CdZnO thin films grown by molecular-beam epitaxy

Applied Surface Science

Volumn 256, Issue 14, 2010, Pages 4734-4737

  Li, L ^a   Yang, Z ^a   Zuo, Z ^a   Lim, J H ^a   Liu, J L ^a  

^a University of California Riverside   (United States)

Author keywords

II VI semiconductors; Molecular beam epitaxy; Photoluminescence; Thermal stability; X ray diffraction; ZnO

Indexed keywords

ANNEALING; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; MIXTURES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; SAPPHIRE; THERMODYNAMIC STABILITY; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

C-PLANE SAPPHIRE SUBSTRATES; IN-SITU ANNEALING; NEAR BAND EDGE; PEAK SHIFT; PHASE CHANGE; PHOTOLUMINESCENCE EMISSION; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; X-RAY DIFFRACTION STUDIES;

CADMIUM COMPOUNDS;

EID: 77950595390     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.02.083     Document Type: Article

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