Optimization of laser patterning of textured gallium-doped zinc oxide for amorphous silicon photovoltaics

Applied Surface Science

Volumn 256, Issue 14, 2010, Pages 4656-4660

  Qiao, Q ^a   Ma, K ^b   Wang, Y Q ^b   Zhang, G C ^b   Shi, Z R ^b   Li, G H ^a  

^a JIANGNAN UNIVERSITY   (China)

^b Suntech Power Holding Co Ltd   (China)

Author keywords

Amorphous silicon photovoltaics; Gallium doped zinc oxide; Laser scribing

Indexed keywords

GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; PHOTOVOLTAIC CELLS; SILICON COMPOUNDS; ZINC OXIDE;

AMORPHOUS SILICON (A-SI:H); APERTURE-AREA EFFICIENCY; GALLIUM DOPED ZINC OXIDES; GALLIUMDOPED ZINC OXIDES (GZO); LASER SCRIBING; LASER SCRIBING PROCESS; PHOTOVOLTAICS; THREE DIMENSIONAL IMAGES;

AMORPHOUS SILICON;

EID: 77950595261     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.02.066     Document Type: Article

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