Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

Journal of Physics: Conference Series

Volumn 209, Issue , 2010, Pages

  Kashtiban, R J ^a   Bangert, U ^a   Sherliker, B ^a   Halsall, M P ^a   Harvey, A J ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOCRYSTALS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY;

C-PLANE SAPPHIRE; ENERGY FILTERED TEM; HIGH-ANGLE ANNULAR DARK FIELDS; POWER EXCITATION; QUANTUM DOT STRUCTURE; QUANTUM DOT SYSTEMS; THREADING DISLOCATION; V-SHAPED DEFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77950487036     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/209/1/012038     Document Type: Conference Paper

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