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Applied Physics Letters

Volumn 96, Issue 13, 2010, Pages

Relaxation dynamics of the metal-semiconductor transition in VO2 thin films

(4) Claassen, J H a Lu, J W b West, K G b Wolf, S A b

a NAVAL RESEARCH LABORATORY (United States)

b University of Virginia (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUILIBRIUM VALUE; FIXED TEMPERATURE; LOGARITHMIC DEPENDENCE; METAL-SEMICONDUCTOR TRANSITIONS; ON TIME; RELAXATION DYNAMICS; TEMPERATURE DEPENDENT; THERMALLY ACTIVATED;

ACTIVATION ENERGY; HYSTERESIS; METAL INSULATOR BOUNDARIES; RADIOACTIVITY LOGGING; SEMICONDUCTOR INSULATOR BOUNDARIES;

METAL INSULATOR TRANSITION;

EID: 77950476587 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3370353 Document Type: Article

Times cited : (25)

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