Measurement of the dc resistance of semiconductor thin film-gas systems: Comparison to several transport models

Journal of Applied Physics

Volumn 102, Issue 8, 2007, Pages

  Carrico, Barbara ^a   Saredy, J ^a   Tracy, J L ^a   Patel, N G ^a   Garner, J ^a   Gasparov, L ^a  

^a UNIVERSITY OF NORTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MEDIUM APPROXIMATION; FINITE FREQUENCIES; GENERAL TRENDS; INDIUM TIN OXIDE; MAXWELL-GARNETT THEORY; RESISTOR NETWORK; THIN FILM SEMICONDUCTORS; TRANSPORT MODELS;

METHANE; OPTICAL CONDUCTIVITY; RESISTORS; SULFUR DIOXIDE; THIN FILMS;

MODELS;

EID: 77950474857     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2801020     Document Type: Article

References (14)

1. V. S. Vaishnav, P. D. Patel, and N. G. Patel, Mater. Manuf. Processes MMAPET 1042-6914 21, 257 (2006).
2. V. S. Vaishnav, P. D. Patel, and N. G. Patel, Thin Solid Films THSFAP 0040-6090 490, 94 (2005).
3. V. S. Vaishnav, P. D. Patel, and N. G. Patel, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2005.01.079 487, 277 (2005).
4. D. Manno, G. Micocci, A. Serra, M. Di Giulio, and A. Tepore, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1324703 88, 6571 (2000).
5. T. Oyabu, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.331079 53, 2785 (1982).
6. J. C. M. Garnett, Philos. Trans. R. Soc. London PTRMAD 0962-8428 10.1098/rsta.1904.0024 203, 385 (1904).
7. D. A. G. Bruggemann, Ann. Phys. ANPYA2 0003-3804 10.1002/andp.19354160705 24, 636 (1935).
8. R. Landauer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1702301 23, 779 (1952).
9. J. C. Garland and D. B. Tanner, AIP Conf. Proc. APCPCS 0094-243X 40 (1978).
10. D. Stroud, Superlattices Microstruct. SUMIEK 0749-6036 10.1006/spmi.1997.0524 23, 567 (1998).
11. J. Garner and D. Stroud, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.25.3199 25, 3199 (1982).
12. Classical Electrodynamics, 2nd ed., edited by J. D. Jackson (Wiley, New York, 1975), p. 155.
13. Irving Langmuir was one of the pioneers in studies of gas adsorption on solid surfaces. See I. Langmuir and D. S. Villars, J. Am. Chem. Soc. JACSAT 0002-7863 10.1021/ja02268a002 38, 2221 (1916).
14. In light of Langmuir's work, which is summarized in Physical Chemistry, 2nd ed., edited by Gilbert W. Castellan (Addison-Wesley, Reading, 1971), p. 436. It is reasonable to believe that in the approach to equilibrium, the transient adsorption process obeys d θ / d t = k a P A (1-θ) ≡ α (1-θ), where P is the gas pressure, A is the area of the solid surface or in our case, the area of the exposed thin film surface, t is time, k a is the temperature-dependent adsorption constant, and θ is related to our function p (t), by θ (t) = 1-p (t). That is, θ is the area fraction of the gas. Integration gives, p (t) = e-α t, where α = k a P A. Others have also used exponentials for the time dependence of the adsorbed gas area fractions. See Adsorption: Theory, Modeling, and Analysis, edited by Jozsef Toth (Marcel Dekker, New York, 2002).