Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures

Journal of Low Temperature Physics

Volumn 159, Issue 1-2, 2010, Pages 216-221

  Mironov, O A ^a,b   Goiran, M ^c   Galibert, J ^c   Kozlov, D V ^d   Ikonnikov, A V ^d   Spirin, K E ^d   Gavrilenko, V I ^d   Isella, G ^e,f,g   Kummer, M ^e,f,g   Von Kanel H ^e,f,g   Drachenko, O ^h   Helm, M ^h   Wosnitza, J ^h   Morris, R J H ^a   Leadley, D R ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b INTERNATIONAL LABORATORY OF HIGH MAGNETIC FIELDS AND LOW TEMPERATURES   (Poland)

^c UNIVERSITÉ DE TOULOUSE   (France)

^d INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^e ETH ZURICH   (Switzerland)

^f Epispeed   (Switzerland)

^g POLITECNICO DI MILANO   (Italy)

^h INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Cyclotron resonance; Effective mass; Landau level; Quantum well

Indexed keywords

EFFECTIVE MASS; GE CONTENT; GE QUANTUM WELL; HETEROSTRUCTURES; HIGH CONDUCTIVITY; LANDAU LEVELS; PULSED MAGNETIC FIELDS; QUANTUM WELL; RESONANCE POSITION; SPLITTINGS;

CYCLOTRON RESONANCE; CYCLOTRONS; GERMANIUM; MAGNETIC FIELDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77950370562     PISSN: 00222291     EISSN: 15737357     Source Type: Journal    
DOI: 10.1007/s10909-009-0147-x     Document Type: Article

References (7)

1. R.J.H. Morris, et al. 2004 Semicond. Sci. Technol. 19 L106 10.1088/0268-1242/19/10/L03 2004SeScT..19L.106M
2. B. Röner G. Isella H. von Känel 2003 Appl. Phys. Lett. 82 754 10.1063/1.1541101 2003ApPhL..82..754R
3. V.Ya. Aleshkin, et al. 2004 Phys. Solid State 46 130 10.1134/1.1641939 2004PhSS...46..130A
4. O. Drachenko, et al. 2009 Phys. Rev. B 79 073301 10.1103/PhysRevB.79. 073301 2009PhRvB..79g3301D
5. R. Winkler M. Merkler T. Darnhofer U. Rössler 1996 Phys. Rev. B 53 10858 10.1103/PhysRevB.53.10858 1996PhRvB..5310858W
6. B. Röner D. Chrastina G. Isella H. von Känel 2004 Appl. Phys. Lett. 84 3058 10.1063/1.1707223 2004ApPhL..84.3058R
7. B. Röner, et al. 2007 Semicond. Sci. Technol. 22 S191 10.1088/0268-1242/22/1/S45