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Volumn 22, Issue 1, 2007, Pages

Effective mass measurement: The influence of hole band nonparabolicity in SiGe/Ge quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CYCLOTRON RESONANCE; MICROSTRUCTURE; SEMICONDUCTING SILICON COMPOUNDS; SHUBNIKOV-DE HAAS EFFECT;

EID: 34247244232     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S45     Document Type: Article
Times cited : (9)

References (13)
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  • 2
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    • Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures
    • Irisawa T, Myronov M, Mironov O A, Parker E H C, Nakagawa K, Murata M, Koh S and Shiraki Y 2003 Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures Appl. Phys. Lett. 82 1425
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    • Irisawa, T.1    Myronov, M.2    Mironov, O.A.3    Parker, E.H.C.4    Nakagawa, K.5    Murata, M.6    Koh, S.7    Shiraki, Y.8
  • 3
    • 0001301917 scopus 로고    scopus 로고
    • Theory for the cyclotron resonance of holes in strained asymmetric Ge-SiGe quantum wells
    • Winkler R, Merkler M, Darnhofer T and Rössler U 1996 Theory for the cyclotron resonance of holes in strained asymmetric Ge-SiGe quantum wells Phys. Rev. B 53 10858
    • (1996) Phys. Rev. , vol.53 , Issue.16 , pp. 10858
    • Winkler, R.1    Merkler, M.2    Darnhofer, T.3    Rössler, U.4
  • 4
    • 0022326751 scopus 로고
    • Self-consistent calculations of electric subbands in p-type GaAlAs-GaAs heterojunctions
    • Bangert E and Landwehr G 1985 Self-consistent calculations of electric subbands in p-type GaAlAs-GaAs heterojunctions Superlatt. Microstruct. 1 363-8
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  • 6
    • 33751056555 scopus 로고
    • Valence-band parameters in cubic semiconductors
    • Lawaetz P 1971 Valence-band parameters in cubic semiconductors Phys. Rev. B 4 3460
    • (1971) Phys. Rev. , vol.4 , Issue.10 , pp. 3460
    • Lawaetz, P.1
  • 7
    • 0005575731 scopus 로고
    • Effect of deformation on the energy spectrum and the electrical properties of imperfect germanium and silicon
    • Pikus G E and Bir G L 1959 Effect of deformation on the energy spectrum and the electrical properties of imperfect germanium and silicon Sov. Phys.-Solid State 1 136-8
    • (1959) Sov. Phys.-Solid State , vol.1 , pp. 136-138
    • Pikus, G.E.1    Bir, G.L.2
  • 8
    • 0010376645 scopus 로고
    • The justification for applying the effective-mass approximation to microstructures
    • Burt M G 1992 The justification for applying the effective-mass approximation to microstructures J. Phys.: Condens. Matter 4 6651-90
    • (1992) J. Phys.: Condens. Matter , vol.4 , Issue.32 , pp. 6651-6690
    • Burt, M.G.1
  • 9
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    • Effective-mass hamiltonian and boundary conditions for the valence bands of semiconductor microstructures
    • Foreman B A 1993 Effective-mass hamiltonian and boundary conditions for the valence bands of semiconductor microstructures Phys. Rev. B 48 4964-7
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    • Foreman, B.A.1
  • 10
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    • Elimination of spurious solutions from eight-band k p theory
    • Foreman B A 1997 Elimination of spurious solutions from eight-band k p theory Phys. Rev. B 56 R12748-R12751
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    • Foreman, B.A.1
  • 11
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    • Evaluation of various approximations used in the envelope-function method
    • Meney A T, Gonul B and O'Reilly E P 1994 Evaluation of various approximations used in the envelope-function method Phys. Rev. B 50 10893-904
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.