SCOPUS 정보 검색 플랫폼

MRS Bulletin

Volumn 35, Issue 3, 2010, Pages 227-230

Physics of oxides for future devices

(1) Scott, James F a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; FERROELECTRIC MATERIALS; FERROELECTRICITY; FLASH MEMORY; LIGHT EMISSION; RANDOM ACCESS STORAGE;

COMMERCIAL DEVICES; DYNAMIC RANDOM ACCESS MEMORY; FERROELECTRIC OXIDES; LIGHT EMITTING DEVICES; MATERIALS RESEARCH; MATERIALS SCIENTIST; RARE EARTH SYSTEMS; THIN FILM FERROELECTRICS;

FERROELECTRIC DEVICES;

EID: 77950203858 PISSN: 08837694 EISSN: None Source Type: Journal
DOI: 10.1557/mrs2010.656 Document Type: Conference Paper

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.