600V trench-gate IGBT with Micro-P structure

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 132-135

  Nakano, H ^a   Onozawa, Y ^a   Kawano, R ^a   Yamazaki, T ^a   Seki, Y ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

EMI noise; Floating p base layer; Turn off oscillation; Turn on di dt controllability

Indexed keywords

BASE LAYERS; EMI NOISE; FLOATING P-BASE LAYER; INVERTER OPERATIONS; LOW NOISE; LOW-POWER DISSIPATION; P-STRUCTURES; POWER DISSIPATION; TRADE-OFF RELATIONSHIP;

ACTIVE FILTERS; ELECTROMAGNETIC PULSE; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

CONTROLLABILITY;

EID: 77949977395     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5158019     Document Type: Conference Paper

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