Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2007, Pages 13-16

  Onozawa, Y ^a   Nakano, H ^a   Otsuki, M ^a   Yoshikawa, K ^b   Miyasaka, T ^a   Seki, Y ^c  

^a FUJI ELECTRIC CO   (Japan)

^b Advanced Technology Corporation   (United States)

^c Fiuji Electric Holdings Co Ltd

Author keywords

EMI noise; Floating P base layer; FWD reverse recovery dv dt; Turn off oscillation; Turn on di dt controllability

Indexed keywords

ENERGY DISSIPATION; MICROPROCESSOR CHIPS; PRODUCT DEVELOPMENT; SIGNAL INTERFERENCE; TECHNOLOGY TRANSFER;

FLOATING P-BASE LAYERS; TURN-OFF OSCILLATION;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 39749094406     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294920     Document Type: Conference Paper

References (6)

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