A 900 MHz, 500 W Doherty power amplifier using optimized output matched Si LDMOS power transistors

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 1577-1580

  Burns, Christopher T ^a   Chang, Allen ^a   Runton, David W ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Doherty amplifiers; Impedance matching; Power amplifiers; Power FET amplifiers; UHF power amplifiers; UHF power FET amplifiers; UHF power FETs

Indexed keywords

FIELD EFFECT TRANSISTORS; IMPEDANCE MATCHING (ELECTRIC); MOS DEVICES; OPTIMIZATION; POLYNOMIALS; SILICON;

DOHERTY POWER AMPLIFIERS; POWER TRANSISTORS;

POWER AMPLIFIERS;

EID: 34748812522     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380577     Document Type: Conference Paper

References (6)

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4. M. Lefevre, D. Runton, L Kinney, L Wright, J.-C. Nanan, J.-J. Bouny, "Digital predistortion application of an LDMOS 200W Doherty amplifier", 2006 IEEE Topical PA Workshop, San Diego, CA., Sep. 2005.
5. Y. Yang, J. Yi, Y. Y. Woo, B. Kim, "Optimum design for linearity and efficiency of microwave Doherty amplifier using a new load matching technique," Microwave J., vol. 44, no. 12, pp. 20-36, Dec. 2001.
6. J. Sirois, S. Boumaiza, M. Helaoui, G. Brassard, F. M. Ghannouchi, "A Robust Modeling and Design Approach for Dynamically Loaded and Digitally Linearized Doherty Amplifiers", IEEE Trans. Microwave Theory & Tech., vol. 53, no. 9, pp. 2875-2883, Sep. 2005.