Structural properties of InSbBi and InSbAsBi thin films prepared by the flash-evaporation method

Crystal Research and Technology

Volumn 36, Issue 8-10, 2001, Pages 1155-1171

  Oszwaldowski, M ^a   Berus, T ^a   Szade, J ^b   Jozwiak K ^a   Olejniczak, I ^c   Konarski, P ^d  

^a POZNAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF SILESIA   (Poland)

^c INSTITUTE OF MOLECULAR PHYSICS   (Poland)

^d Instytut Technologii Prozniowej   (Poland)

Author keywords

Electrical properties; InSbAsBi; InSbBi; Structural properties; Thin films

Indexed keywords

CRYSTAL FILMS;

BAND STRUCTURE; ELECTRIC PROPERTIES; ENERGY GAP; HALL EFFECT; OPACITY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0035164630     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200110)36:8/10<1155::AID-CRAT1155>3.0.CO;2-C     Document Type: Conference Paper

References (28)

1. AKCHURIN, R., ZHINOVEV, V. KUZMICHEVA, G., UFIMTSEV, V.: Krystallografiya 27 (1982) 561
2. AMEMIYA, Y., TERAO, H., SAKAI, Y.: J. Appl. Phys. 44 (1973) 1625
3. BABA, S., HORITA, H., KINBARA, A.: J. Appl. Phys. 49 (1978) 3632
4. BARNETT, S. A.: J. Vac. Sci. Technol. A 5 (1987) 2845
5. BERUS, T., GOC, J., NOWAK, M. OSZWALDOWSKI, M., ZIMPEL, M.: Thin Solid Films, 111 (1984) 351
6. BERUS, T., GOC, J., OSZWALDOWSKI, M., SZWEYCER, H., PORTAL, J. C.: Thin Solid Films 131 (1985) 105
7. CADIEN, K. C, ZILCO, J. L., ELTOUKHY, A. H., GREENE, J. E.: J. Vac. Sci. Technol. 17 (1980) 441
8. DU, Q., ALPERIN, J., WANG, W.I.: J. Cryst. Growth 175/176 (1999) 849
9. FANG, Z. M., MA, K. Y., COHEN, R. M., STRINGFELLOW, G. B. J.: Apl. Phys. 68 (1990) 1187
10. FARROW, R. F. C.: J. Vac. Sci. Technol. B 1 (1983) 222
11. HUANG, K. T., CHIU, C.T., COHEN, R. M., STRINGFELLOW, G. B.: J. ApI. Phys. 75 (1994) 2857
12. JEAN-LOUIS, M., HAMON, C.: phys. stat. sol. 34 (1969) 329
13. JEAN-LOUIS, M., AYRAULT, B., VARGAS, J.: phys. stat. sol. 34 (1969) 341
14. JOUKOFF, B., JEAN-LOUIS, M.: J. Cryst. Growth 12 (1972) 169
15. KOWTONIUK N.F., KONCEWOJ J.A.: Measurements of Parameters of Semiconductor Materials (in Polish) - PWN Warsaw 1973
16. LANDOLDT-BORNSTEIN Numerical Data, Vol. III/17 (1982)
17. LEE, J. J., KIM, J. D., RAZEGHI, M.: Appl. Phys. Lett. 73 (1998) 602
18. LEE, J. J., KIM, J. D., RAZEGHI, M.: J. Korean Phys. Soc. 35 (1999) S275
19. MA, K. Y., FANG, Z. M., COHEN, R. M., STRINGFELLOW, G. B.: J. Apl. Phys. 68 (1990) 4586
20. NOREIKA, A. J., TAKEL, W. J, FRANKOMBE, M. H., WOOD, C. E. C.: J. Appl. Phys. 53 (1982) 4932
21. NOREIKA, A. J., GREGGI, J. TAKEL, W. J., FRANKOMBE, M. H. J.: Vac. Sci. Technol. A 1 (1983) 558
22. OE, K., ANDO, S., SIGIYAMA, K.: Jpn. J. Appl. Phys. 19 (1980) L417
23. OKAMOTO, H., OE, K.: Jpn. J. Appl. Phys. 38(1999) 1022
24. OSZWALDOWSKI, M., SLANY, M.: Vacuum 43 (1992) 617
25. TIWARI, S., FRANK, D. J.: Appl. Phys. Lett. 60 (1992) 630
26. WAGENER, M. C., KROON, R. E., BOTHA, J. R., LEITH, A. W. R.: Physica B 273-274 (1999) 919
27. WAGENER, M. C., BOTHA, J. R., LEITH, A. W. R.: J. Cryst. Growth 213 (2000) 51
28. ZILCO, J. L., GREENE, J. E.: J. Appl. Phys. 51 (1980) 1549