Effect of ion bombardment on the field emission property of tetrapod ZnO

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Cui, Yunkang ^a,b   Zhang, Xiaobing ^a,c   Lei, Wei ^a,c   Di, Yunsong ^d   Wang, Jinchan ^a   Yang, Xiaxi ^a  

^a SOUTHEAST UNIVERSITY   (China)

^b NANJING INSTITUTE OF TECHNOLOGY   (China)

^c Jiangsu Information Display Engineering Research Center   (China)

^d NANJING NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION OF; FIELD EMISSION PROPERTY; FIELD EMITTER; FIELD ENHANCEMENT FACTOR; IN-FIELD; ION CURRENTS; PHOTOLUMINESCENCE SPECTRUM; SCANNING ELECTRON MICROSCOPY IMAGE; SURFACE OXYGEN VACANCIES; SURFACE STATE; THRESHOLD FIELDS; TURN-ON FIELD; ZNO; ZNO NANOSTRUCTURES;

FIELD EMISSION; IONS; LEAKAGE (FLUID); OXYGEN; OXYGEN VACANCIES; SCANNING ELECTRON MICROSCOPY; ZINC OXIDE;

ION BOMBARDMENT;

EID: 77949686178     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3319655     Document Type: Article

References (24)

1. N. de Jonge, Y. Lamy, K. Schoots, and T. H. Oosterkamp, Nature (London) 420, 393 (2002).
2. S. Senda, Y. Sakai, Y. Mizuta, S. Kita, and F. Okuyama, Appl. Phys. Lett. 85, 5679 (2004).
3. X. M. H. Huang, C. A. Zorman, M. Mehregany, and M. L. Roukes, Nature (London) 421, 496 (2003).
4. Y. Saito and S. Uemura, Carbon 38, 169 (2000).
5. N. Y. Huang, J. C. She, S. Z. Jun, C. Deng, N. S. Xu, H. Bishop, S. E. Huq, L. Wang, D. Y. Zhong, E. G. Wang, and D. M. Chen, Phys. Rev. Lett. 93, 075501 (2004).
6. J. M. Bonard, C. Klinke, K. A. Dean, and B. F. Coll, Phys. Rev. B 67, 115406 (2003).
7. Y. Wei, C. G. Xie, K. A. Dean, and B. F. Coll, Appl. Phys. Lett. 79, 4527 (2001).
8. K. A. Dean, T. P. Brgin, and B. R. Chalamala, Appl. Phys. Lett. 79, 1873 (2001).
9. V. Meunier, P. Senet, and P. Lambin, Phys. Rev. B 60, 7792 (1999).
10. J. C. Wang, X. B. Zhang, W. Lei, M. Xiao, Y. K. Cui, Y. S. Di, and F. M. Mao, J. Vac. Sci. Technol. B 25, 615 (2007).
11. R. H. Reuss, and B. R. Chalamala, Inf. Disp. 17, 28 (2001).
12. G. Gärtner, P. Geittner, D. Raasch, A. Ritz, and D. U. Wiechert, Appl. Surf. Sci. 146, 12 (1999).
13. S. H. Jo, D. Banerjee, and Z. F. Ren, Appl. Phys. Lett. 85, 1407 (2004).
14. S. H. Jo, J. Y. Lao, Z. F. Ren, R. A. Farrer, T. Baldacchini, and J. T. Fourkas, Appl. Phys. Lett. 83, 4821 (2003).
15. C. Li, Y. Yang, X. W. Sun, W. Lei, X. B. Zhang, B. P. Wang, J. X. Wang, B. K. Tay, J. D. Ye, G. Q. Lo, and D. L. Kwong, Nanotechnology 18, 135604 (2007).
16. L. F. Dong, J. Jiao, D. W. Tuggle, J. M. Petty, S. A. Elliff, and M. Coulter, Appl. Phys. Lett. 82, 1096 (2003).
17. R. H. Baughman, A. V. Zakhidov, and W. A. de Heer, Science 297, 787 (2002).
18. Y. Dai, Y. Zhang, Q. K. Li, and C. W. Nan, Chem. Phys. Lett. 358, 83 (2002).
19. E. Nasser, Fundamentals of Gaseous Ionization and Plasma Electronics (Wiley, New York, 1971).
20. S. C. Lyu, Y. Zhang, H. Ruh, H. J. Lee, H. W. Shim, E. K. Suh, and C. J. Lee, Chem. Phys. Lett. 363, 134 (2002).
21. V. Srikant and D. R. Clarke, J. Appl. Phys. 83, 5447 (1998).
22. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996).
23. Q. Zhao, X. Y. Xu, X. F. Song, X. Z. Zhang, and D. P. Yu, Appl. Phys. Lett. 88, 033102 (2006).
24. R. H. Fowler and L. W. Nordheim, Proc. R. Soc. London, A 119, 173 (1928).