The calculated composition of Ge1 - z Cz / Ge1 - x - y Six Sny heterostructure grown on Si for direct gap emission from Ge1 - z Cz at 1.55 μ m

Solid State Communications

Volumn 150, Issue 17-18, 2010, Pages 844-847

  Ghosh, Sumitra ^a   Basu, P K ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

A. Group IV materials; A. Heterostructures; D. Light emission

Indexed keywords

A. HETEROSTRUCTURES; BOWING PARAMETERS; D. LIGHT EMISSION; HETEROSTRUCTURES; LINEAR INTERPOLATION; STRAINED-GE;

CONDUCTION BANDS; CRYSTALS; ELECTRON MOBILITY; GERMANIUM; LIGHT EMISSION; SILICON; TIN;

HETEROJUNCTIONS;

EID: 77949488477     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.02.017     Document Type: Article

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