Indium tin oxide thin films for silicon-based electro-luminescence devices prepared by electron beam evaporation method

Journal of Non-Crystalline Solids

Volumn 356, Issue 18-19, 2010, Pages 911-916

  Wan, Neng ^a   Wang, Tao ^a   Sun, Hongcheng ^a   Chen, Guran ^a   Geng, Lei ^a   Gan, Xinhui ^a   Guo, Sihua ^a   Xu, Jun ^a   Xu, Ling ^a   Chen, Kunji ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Electrical and electronic properties; Electroluminescence; Films and coatings; Indium tin oxide and other transparent conductors

Indexed keywords

DEPOSITION ATMOSPHERE; ELECTRICAL AND ELECTRONIC PROPERTIES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRON BEAM EVAPORATION; ELECTRON BEAM EVAPORATION METHODS; ENHANCED SURFACE; FILM MICROSTRUCTURES; FILMS AND COATINGS; INDIUM TIN OXIDE; INDIUM TIN OXIDE THIN FILMS; ITO FILMS; ITO THIN FILMS; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL PERFORMANCE; OPTICAL TRANSMITTANCE; OPTIMIZED CONDITIONS; OXYGEN ATMOSPHERE; POST-ANNEALING TEMPERATURE; SI-BASED; SILICON-BASED; TIN DOPED INDIUM OXIDE; TRANSPARENT CONDUCTORS;

COATINGS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; ELECTRON BEAMS; ELECTRONIC PROPERTIES; EVAPORATION; INDIUM; LIGHT; MAGNETIC FILMS; OPTICAL PROPERTIES; OXIDE FILMS; OXYGEN; PHOTOLITHOGRAPHY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; TIN; TITANIUM COMPOUNDS; VAPORS;

ITO GLASS;

EID: 77949324824     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2009.12.026     Document Type: Article

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