SCOPUS 정보 검색 플랫폼

Review of Scientific Instruments

Volumn 81, Issue 2, 2010, Pages

Boron ion source based on planar magnetron discharge in self-sputtering mode

(7) Gushenets, V I a Hershcovitch, A b Kulevoy, T V c Oks, E M a Savkin, K P a Vizir, A V a Yushkov, G Yu a

a INSTITUTE OF HIGH CURRENT ELECTRONICS (Russian Federation)

b BROOKHAVEN NATIONAL LABORATORY (United States)

c INSTITUTE FOR THEORETICAL AND EXPERIMENTAL PHYSICS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM ANALYSIS; BENDING MAGNETS; DISCHARGE POWER; ELECTRICAL CONDUCTIVITY; HIGH-CURRENT; HIGH-VOLTAGE DISCHARGES; ION FRACTION; LOW-VOLTAGE; OPERATIONAL MODES; PLANAR MAGNETRON; PLANAR MAGNETRON DISCHARGE; PULSE LENGTH; ROOM TEMPERATURE; SEMICONDUCTOR INDUSTRY; SPUTTERING TARGET; STEADY STATE; SURFACE TEMPERATURES; TARGET TEMPERATURE; TIME-OF-FLIGHT SYSTEM;

BORON; BORON COMPOUNDS; ELECTRIC CONDUCTIVITY; INDUSTRIAL APPLICATIONS; ION SOURCES; MAGNETRONS; SEMICONDUCTOR DEVICE MANUFACTURE; TARGETS;

IONS;

EID: 77949309777 PISSN: 00346748 EISSN: None Source Type: Journal
DOI: 10.1063/1.3258029 Document Type: Conference Paper

Times cited : (23)

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