Analysis of interface switching for Nb doped SrTiO3 single crystal device using complex impedance spectroscopy

Current Applied Physics

Volumn 10, Issue 1 SUPPL. 1, 2010, Pages

  Lee, Joonmyoung ^a   Bourim, El Mostafa ^a   Shin, Dongku ^b   Lee, Jong Sook ^b   Seong, Dong jun ^a   Park, Jubong ^a   Lee, Wootae ^a   Chang, Man ^a   Jung, Seungjae ^a   Shin, Jungho ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

Impedance; Mechanism; ReRAM

Indexed keywords

COMPLEX IMPEDANCE SPECTROSCOPY; CONDUCTION ELECTRONS; FREQUENCY DOMAINS; HIGH RESISTIVE STATE; IMPEDANCE; IMPEDANCE SPECTROSCOPY; INTERFACE SWITCHING; NB-DOPED SRTIO; RESISTANCE STATE; RESISTIVE STATE; RESISTIVE SWITCHING; SCHOTTKY JUNCTIONS; SWITCHING MECHANISM;

ACTIVATION ENERGY; ELECTRIC IMPEDANCE MEASUREMENT; NIOBIUM COMPOUNDS; OXYGEN; SINGLE CRYSTALS; STRONTIUM ALLOYS; SWITCHING; SWITCHING SYSTEMS;

OXYGEN VACANCIES;

EID: 77949267092     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.12.016     Document Type: Article

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