Parasitic effect of the (Ba,Sr)TiO3 thin film for tunable microwave device application

Ferroelectrics

Volumn 383, Issue 1 PART 4, 2009, Pages 119-126

  Liu, Chih Yi ^a,b   Zhuang, Bo Chang ^a   Lai, Chun Hung ^c   Lin, Jyun Min ^a  

^a NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL UNITED UNIVERSITY   (Taiwan)

Author keywords

(Ba,Sr)TiO3; Parasitic effect; Tunable microwave device

Indexed keywords

BOTTOM ELECTRODES; CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; ELECTRON BEAM EVAPORATORS; FIGURE OF MERIT; FREQUENCY DISPERSION; LOSS TANGENT; LOW FREQUENCY; MAGNETRON SPUTTER; MEASUREMENT FREQUENCY; MODIFIED MODEL; PARASITIC EFFECT; PARASITIC INDUCTANCES; PARASITIC RESISTANCES; PT THIN FILMS; RADIO FREQUENCIES; SERIES RESISTANCES; SIMULATION RESULT; TIO; TUNABILITIES; TUNABLE MICROWAVE DEVICES; VOLTAGE-CONTROLLED;

BARIUM; CAPACITANCE; ELECTRON BEAMS; MICROWAVE DEVICES; MICROWAVES; PLATINUM; THIN FILM DEVICES; THIN FILMS; TITANIUM OXIDES;

BARIUM COMPOUNDS;

EID: 77749344758     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190902888590     Document Type: Conference Paper

References (5)

1. 3 film composite structure for tunable applications. Appl. Phys. Lett. 89, 032905 (2006).
2. 2 buffer layers. Appl. Phys. Lett. 87, 212903 (2005).
3. 3 thin films for tunable microwave devices. J. Appl. Phys. 95, 1416 (2004).
4. 3 thin films for realization of temperature insensitive tunable phase shifter devices. J. Appl. Phys. 102, 034104 (2004).
5. 3 as high-k gate dielectric. IEEE Electron Device Lett. 23, 553 (2002).