Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots

Applied Surface Science

Volumn 256, Issue 12, 2010, Pages 3862-3865

  Zhang, Xiangqiang ^a   Hou, Shili ^a   Mao, Huibing ^a   Wang, Jiqing ^a   Zhu, Ziqiang ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

Annealing; Photoluminescence; Point defects; Quantum dots

Indexed keywords

ANNEALING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; NANOCRYSTALS; OXYGEN; PHOTOLUMINESCENCE; POINT DEFECTS; SOL-GEL PROCESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

DEBYE-SCHERRER FORMULA; HEXAGONAL WURTZITE STRUCTURE; INCREASING TEMPERATURES; PHOTOLUMINESCENCE PROPERTIES; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; THEORETICAL CALCULATIONS; TRANSMISSION ELECTRON MICROSCOPY IMAGES; ULTRA VIOLET EXCITATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77649238963     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.01.041     Document Type: Article

References (27)

1. Chrissanthopoulos A., Baskoutas S., Bouropoulos N., Dracopoulos V., Tasis D., and Yannopoulos S.N. Thin Solid Films 515 (2007) 8524
2. Chen L., Chen Z.Q., Shang X.Z., Liu C., Xu S., and Fu Q. Solid State Commun. 137 (2006) 561
3. Ren F., Zhang L.Y., Xiao X.H., Cai G.X., Fan L.X., Liao L., and Jiang C.Z. Nanotechnology 19 (2008) 155610
4. Wu H.Z., Qiu D.J., Cai Y.J., Xu X.L., and Chen N.B. J. Cryst. Growth 245 (2002) 50
5. Yang L.L., Yang J.H., Liu X.Y., Zhang Y.J., Wang Y.X., Fan H.G., Wang D.D., and Lang J.H. J. Alloys Compd. 463 (2008) 92
6. Spanhel L., and Anderson M.A. J. Am. Chem. 113 (1991) 2826
7. Meulenkamp E.A. J. Phys. Chem. B 102 (1998) 5566
8. Wu Y.L., Tok A.I.Y., Boey F.Y.C., Zeng X.T., and Zhang X.H. Appl. Surf. Sci. 253 (2007) 5473
9. Guo L., Yang S.H., Yang C.L., Yu P., Wang J.N., Ge W.K., and Wong G.K.L. Appl. Phys. Lett. 76 (2000) 2901
10. Tong Y.H., Liu Y.C., Lu S.X., Dong L., Chen S.J., and Xiao Z.Y. J. Sol-Gel Sci. Technol. 30 (2004) 157
11. Kong Y.C., Yu D.P., Zhang B., Fang W., and Feng S.Q. Appl. Phys. Lett. 78 (2004) 407
12. Dijken A.V., Meulenkamp E.A., Vanmaeklbergh D., and Meijerink A. J. Phys. Chem. B 104 (2000) 1715
13. Heo Y.W., Norton P.P., and Pearton S.J. J. Appl. Phys. 98 (2005) 073502
14. Zhou X., Kuang Q., Jiang Z.Y., Xie Z.X., Xu T., Huang R.B., and Zheng L.S. J. Phys. Chem. C 111 (2007) 12091
15. Kang J.S., Kang H.S., Pang S.S., Shim E.S., and Lee S.Y. Thin Solid Films 443 (2003) 5
16. Djurisic A.B., Leung Y.H., Tam K.H., Ding L., Ge W.K., Chen H.Y., and Guo S. Appl. Phys. Lett. 88 (2006) 103107
17. Yang J.H., Liu X.Y., Yang L.L., Wang Y.X., Zhang Y.J., Lang J.H., Gao M., and Feng B. J. Alloys Compd. 477 (2009) 632
18. Kim H.W., Kebede M.A., Kim H.S., Kong M.H., and Lee C. J. Lumin. 129 (2009) 1619
19. Chao L.C., Huang J.W., and Chang C.W. Physica B 404 (2009) 1301
20. Klug H.P., and Alexaander L.E. X-ray Diffraction Procedure for Crystalline and Amorphous Materials (1974), Wiley, New York p. 662
21. Brus L.E. J. Chem. Phys. 80 (1984) 4403
22. Baskoutas S., and Terzis A.F. J. Appl. Phys. 99 (2006) 013708
23. Baskoutas S., and Terzis A.F. Mater. Sci. Eng. B 147 (2008) 280
24. Lin B.X., Fu Z.X., and Jia Y.B. Appl. Phys. Lett. 79 (2001) 943
25. Tuomisto F., Ranki V., Saarinen K., and Look D.C. Phys. Rev. Lett. 91 (2003) 205502
26. Reshchikov M.A., Xie J.Q., Hertog B., and Osinsky A. J. Appl. Phys. 103 (2008) 103514
27. Wang N., Lin H., Li J.B., Zhang L.Z., Li X., Wu J., and Lin C.F. J. Am. Ceram. Soc. 90 (2007) 635