Controlling the growth of ZnO quantum dots embedded in silica by Zn/F sequential ion implantation and subsequent annealing

Nanotechnology

Volumn 19, Issue 15, 2008, Pages

  Ren, F ^a   Zhang, L Y ^a   Xiao, X H ^a   Cai, G X ^a   Fan, L X ^a   Liao, L ^a   Jiang, C Z ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GROWTH RATE; ION IMPLANTATION; PHOTOLUMINESCENCE SPECTROSCOPY; SILICA; ZINC OXIDE;

PHOTOLUMINESCENCE SPECTRUM; SEQUENTIAL ION IMPLANTATION; SUBSEQUENT ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

NANOPARTICLE; QUANTUM DOT; SILICON DIOXIDE; ZINC OXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; OXIDATION; PHOTOLUMINESCENCE; PRIORITY JOURNAL; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 42549137927     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/15/155610     Document Type: Article

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