Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition

Thin Solid Films

Volumn 518, Issue 11, 2010, Pages 2971-2974

  Nakamura, Tatsuru ^a   Masuko, Keiichiro ^a   Ashida, Atsushi ^a   Yoshimura, Takeshi ^a   Fujimura, Norifumi ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

Homoepitaxial growth; Optical emission spectroscopy; Pulsed laser deposition; Zinc oxide

Indexed keywords

DEPOSITION CONDITIONS; FLUX RATIO; GROWTH PROCESS; HOMOEPITAXIAL; HOMOEPITAXIAL GROWTH; LASER FLUENCES; OPTICAL EMISSION SPECTRA; OXYGEN PRESSURE; PIT FORMATION; POLAR SUBSTRATES; PULSED LASER; PULSED LASER DEPOSITION ZINC OXIDE; TARGET-SUBSTRATE DISTANCE; THREE-DIMENSIONAL GROWTH; ZNO SUBSTRATE; ZNO THIN FILM;

DEPOSITION; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; LEAKAGE (FLUID); LIGHT EMISSION; METALLIC FILMS; OPTICAL EMISSION SPECTROSCOPY; OPTICAL FILMS; OXYGEN; PHOTORESISTS; PULSED LASER DEPOSITION; SUBSTRATES; THIN FILMS; ZINC; ZINC OXIDE;

PULSED LASERS;

EID: 77649104520     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.184     Document Type: Article

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