Improvement in heat dissipation by transfer of IV-VI epilayers from silicon to copper

IEEE Photonics Technology Letters

Volumn 16, Issue 11, 2004, Pages 2433-2435

  Li, Y F ^a   McCann, P J ^a   Sow, A ^a   Yao, C ^a   Kamat, P C ^a  

^a USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; COPPER; HEAT LOSSES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PUMPING (LASER); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SILICON; THERMAL CONDUCTIVITY;

EPILAYER HEAT DISSIPATION; EPITAXIAL LAYER LIFTOFF; METALLURGICAL BONDING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 7744226690     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.834908     Document Type: Article

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